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TLV752 датащи(PDF) 20 Page - Texas Instruments

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номер детали TLV752
подробное описание детали  TLV752 Dual, 1-A, High-Accuracy, Adjustable-LDO in a Small-Size Package
PDF  29 Pages
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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TLV752 датащи(HTML) 20 Page - Texas Instruments

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TLV752
SBVS383 – DECEMBER 2019
www.ti.com
Product Folder Links: TLV752
Submit Documentation Feedback
Copyright © 2019, Texas Instruments Incorporated
8.2 Typical Application
Figure 44 shows the typical application circuit for the TLV752. Input and output capacitances must be at least
1 µF.
Figure 44. TLV752 Typical Application
8.2.1 Design Requirements
Use the parameters listed in Table 2 for typical linear regulator applications.
Table 2. Design Parameters
PARAMETER
DESIGN REQUIREMENT
Input voltage
3.8 V
Output voltage
3.3 V, ±1%
Input current
1 A (maximum)
Output load
1-A dc
Maximum ambient temperature
70°C
8.2.2 Detailed Design Procedure
Input and output capacitors are required to achieve the output voltage transient requirements. Capacitance
values of 2.2 µF are selected to give the maximum output capacitance in a small, low-cost package; see the
Input and Output Capacitor Selection section for details.
Figure 40 illustrates the output voltage of the TLV752. Set the output voltage using the resistor divider.
8.2.2.1 Input Current
During normal operation, the input current to the LDO is approximately equal to the output current of the LDO.
During startup, the input current is higher as a result of the inrush current charging the output capacitor. Use
Equation 6 to calculate the current through the input.
where:
VOUT(t) is the instantaneous output voltage of the turn-on ramp
dVOUT(t) / dt is the slope of the VOUT ramp
RLOAD is the resistive load impedance
(6)
8.2.2.2 Thermal Dissipation
The junction temperature can be determined using the junction-to-ambient thermal resistance (RθJA) and the total
power dissipation (PD). Use Equation 7 to calculate the power dissipation. Multiply PD by RθJA as Equation 8
shows and add the ambient temperature (TA) to calculate the junction temperature (TJ).
PD = (IGND+ IOUT) × (VIN – VOUT)
(7)
TJ = RθJA × PD + TA
(8)



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