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OPA810

SBOS799A – AUGUST 2019 – REVISED DECEMBER 2019

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Theseare stress ratings

only, which do not imply functional operation of the device at these or anyother conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

VS is the total supply voltage given by VS = VS+ – VS– .

(3)

Equal to the lower of ±7 V or total supply voltage.

(4)

Long-term continuous output current for electromigration limits.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage (total bipolar supplies)(2)

±14

VIN

Input voltage

VS– – 0.5

VS+ + 0.5

VIN,Diff

Differential input voltage(3)

±7

Continuous input current

±10

Continuous output current(4)

TA = –40℃ to +85℃

±40

TA = 125℃

±15

Continuous power dissipation

See Thermal Information

Junction temperature

150

°C

Tstg

Storage temperature

–65

125

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2500

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1500

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Total supply voltage

4.75

Ambient temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

OPA810

UNIT

D (SOIC)

DBV (SOT-23)

DCK (SC70)

8 PINS

5 PINS

RθJA

Junction-to-ambient thermal resistance

134.8

174.3

190.8

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

75.2

94.7

140.1

°C/W

RθJB

Junction-to-board thermal resistance

78.2

45.4

69.0

°C/W

ψJT

Junction-to-top characterization parameter

25.2

21.6

45.9

°C/W

ψJB

Junction-to-board characterization parameter

77.4

45.0

68.8

°C/W

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