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ADA4945-1ACPZ-R2 датащи(PDF) 15 Page - Analog Devices

номер детали ADA4945-1ACPZ-R2
подробное описание детали  High Speed Offset Drift Fully Differential ADC Driver
PDF  44 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
Logo AD - Analog Devices

ADA4945-1ACPZ-R2 датащи(HTML) 15 Page - Analog Devices

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Data Sheet
ADA4945-1
Rev. 0 | Page 15 of 44
ABSOLUTE MAXIMUM RATINGS
Table 10.
Parameter
Rating
Supply Voltage
11 V
VOCM
±VS
Differential Input Voltage
±1 V
Operating Temperature Range
−40°C to +125°C
Storage Temperature Range
−65°C to +150°C
Lead Temperature (Soldering, 10 sec)
300°C
Junction Temperature
150°C
Electrostatic Discharge (ESD)
Field Induced Charged Device Model
(FICDM)
1250 V
Human Body Model (HBM)
4000 V
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θJA is the natural convection, junction to ambient, thermal
resistance measured in a one cubic foot sealed enclosure. θJC is
the junction to case thermal resistance.
Table 11.
Package Type
θJA
θJC
Unit
CP-16-22
70
15
°C/W
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the ADA4945-1
package is limited by the associated rise in junction temperature
(TJ) on the die. At approximately 150°C, which is the glass
transition temperature, the properties of the plastic change. Even
temporarily exceeding this temperature limit can change the
stresses that the package exerts on the die, permanently shifting
the parametric performance of ADA4945-1. Exceeding a junction
temperature of 150°C for an extended period can result in changes
in the silicon devices, potentially causing failure.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power dissipation is the voltage between the supply pins (±VS)
times the quiescent current (IS). The load current consists of the
differential and common-mode currents flowing to the load, as
well as currents flowing through the external feedback networks
and internal common-mode feedback loop. The internal resistor
tap used in the common-mode feedback loop places a negligible
differential load on the output. Consider RMS voltages and
currents when dealing with ac signals.
Airflow reduces θJA. In addition, more metal directly in contact
with the package leads from metal traces through holes, ground,
and power planes reduces the θJA.
Figure 2 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 16-lead LFCSP
JA = 70°C/W) package on a JEDEC standard 4-layer board. θJA
values are approximations.
3.0
0
–40
–20
0
20
40
60
120
100
80
AMBIENT TEMPERATURE (°C)
0.5
1.0
1.5
2.0
2.5
Figure 2. Maximum Safe Power Dissipation vs. Ambient Temperature
ESD CAUTION



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