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GD9FS1G8F2ALG датащи(PDF) 43 Page - GigaDevice Semiconductor (Beijing) Inc.

номер детали GD9FS1G8F2ALG
подробное описание детали  Single level cell technology
PDF  55 Pages
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производитель  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
домашняя страница  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD9FS1G8F2ALG датащи(HTML) 43 Page - GigaDevice Semiconductor (Beijing) Inc.

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43
11. DC CHARACTERISTICS
Parameter
Symbol
Test Conditions
1.7v ~ 1.95v / 2.7v ~ 3.6v
Unit
Min
Typ.
Max
Power on reset current
ICC0
FFh command after power on
50
mA
Operating
Current
Page Read with
Serial Access
ICC1
tRC=Min, CE#=VIL,
IOUT=0mA
-
15
30
mA
Program
ICC2
-
-
15
30
Erase
ICC3
-
-
15
30
Standby Current (CMOS)
ISB
CE#=VCC-0.2, WP#=0V/VCC
-
10
50
μA
Input Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
±10
Output Leakage Current
ILO
VOUT=0 to Vcc(max)
-
-
±10
Input High Voltage
VIH
-
0.8xVCC
-
VCC+0.3
V
Input Low Voltage
VIL
-
-0.3
-
0.2xVCC
Output High Voltage Level
VOH
IOH=-400
μA
VCC-0.3
-
-
Output Low Voltage Level
VOL
IOL=2.1mA
-
-
0.4
Output Low Current(R/B#)
IOL(R/B#)
VOL=0.45V
3/8
4/10
-
mA
erase/program lockout voltage
VLKO
1.5/1.9
V



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