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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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GD5F1GQ4REFJS датащи(PDF) 9 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD5F1GQ4REFJS датащи(HTML) 9 Page - GigaDevice Semiconductor (Beijing) Inc. |
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9 / 60 page  SPI(x1/x2/x4) NAND Flash 1G 9 3 ARRAY ORGANIZATION Each block has Each page has 128K+8K 2K+128 bytes 64 - pages - - blocks Figure3-1. Array Organization 2048 128 2048 128 1 block 1 block = (2K + 128 bytes) x 64 pages = (128K + 8K) bytes 1 page = (2K + 128 bytes) Cache Register Data Register SO SI Per device: 1Gb: 1024blocks 1 device: For 1Gb = (128K + 8K) bytes x 1024 blocks = 1Gb Internal ECC = OFF 2048 64 2048 64 1 block 1 block = (2K + 64 bytes) x 64 pages = (128K + 4K) bytes 1 page = (2K + 64 bytes) Cache Register Data Register SO SI Per device: 1Gb: 1024blocks 1 device: For 1Gb = (128K + 4K) bytes x 1024 blocks = 1Gb Internal ECC= ON Note: 1.When Internal ECC is enabled，user can program the first 64 bytes of the entire 128 bytes spare area and the last 64 bytes of the whole spare area cannot be programed，user can read the entire 128 Byte spare area. 2.When Internal ECC is disabled，user can read and program the entire 128 bytes spare area. |
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