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GD5F1GQ4REFJS датащи(PDF) 49 Page - GigaDevice Semiconductor (Beijing) Inc.

номер детали GD5F1GQ4REFJS
подробное описание детали  SPI(x1/x2/x4) NAND Flash
PDF  60 Pages
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производитель  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
домашняя страница  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD5F1GQ4REFJS датащи(HTML) 49 Page - GigaDevice Semiconductor (Beijing) Inc.

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SPI(x1/x2/x4) NAND Flash
1G
49
17 DC CHARACTERISTIC
(T= -40℃~105℃, VCC=1.7~2.0V/2.7~3.6V)
Symbol
Parameter
Test Condition
Min.
Typ
Max.
Unit.
ILI
Input Leakage Current
±2
μA
ILO
Output Leakage Current
±2
μA
ICC1
Standby Current
CS#=VCC,
VIN=VCC or VSS
90 (1)
μA
ICC2
Operating Current (Read)
CLK=0.1VCC /
0.9VCC
at 108MHz,
Q=Open(*1,*2,*4 I/O)
40
mA
CLK=0.1VCC /
0.9VCC
at 80MHz,
Q=Open(*1,*2,*4 I/O)
30
mA
ICC3
Operation Current (PP)
CS#=VCC
40
mA
ICC4
Operation Current (BE)
CS#=VCC
40
mA
VIL
Input Low Voltage
0.2VCC
V
VIH
Input High Voltage
0.7VCC
V
VOL
Output Low Voltage
IOL =1.6mA
0.4
V
VOH
Output High Voltage
IOH =-
100μA
VCC-0.2
V
Note: 1. When Temperature is 105℃, the maximum standby current is 200uA



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