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ZXLD1371QESTTC датащи(PDF) 29 Page - Diodes Incorporated |
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ZXLD1371QESTTC датащи(HTML) 29 Page - Diodes Incorporated |
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29 / 42 page ![]() ZXLD1371Q ZXLD1371Q Document number: DS37116 Rev. 1 - 2 29 of 42 www.diodes.com September 2015 © Diodes Incorporated ZXLD1371Q Application Information (cont.) Example 2: Using the ZXMN6A09KQ (VDS(MAX) = 60V, ID(MAX) = 12.2A): QG = 29nC at VGS = 10V ZXLD1371Q IPEAK = 300mA Assuming that cumulatively the rise time and fall time can account for a maximum of 10% of the period, the maximum frequency allowed in this condition is: tPERIOD = 20*dt f = 1/ tPERIOD = 515kHz This frequency is within the recommended frequency range the device can handle, therefore the ZXMN6A09KQ is recommended to be used with the ZXLD1371Q for frequencies from 300kHz to 500kHz). The recommended total gate charge for the MOSFET used in conjunction with the ZXLD1371Q is less than 30nC. Junction Temperature Estimation Finally, the ZXLD1371Q junction temperature can be estimated using the following equations: Total supply current of ZXLD1371Q: IQTOT IQ f • QG Where IQ = total quiescent current IQ-IN + IQ-AUX Power consumed by ZXLD1371Q PIC = VIN • (IQ f • Qg Or in case of separate voltage supply, with VAUX < 15V PIC = VIN • IQ-IN + Vaux • (IQ-AUX f • Qg TJ = TA + PIC • JA = TA + PIC • (JC + CA) Where the total quiescent current IQTOT consists of the static supply current (IQ) and the current required to charge and discharge the gate of the power MOSFET. Moreover the part of thermal resistance between case and ambient depends on the PCB characteristics. Figure 8. Power derating curve for ZXLD1371 mounted on test board according to JESD51 ns 97 mA 300 nC 29 PEAK I g Q dt 0 0.5 1 1.5 2 2.5 -40 -25 -10 5 20 35 50 65 80 95 110 125 AMBIENT TEMPERATURE (°C) |
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