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ZXLD1371QESTTC датащи(PDF) 29 Page - Diodes Incorporated

номер детали ZXLD1371QESTTC
подробное описание детали  AUTOMOTIVE GRADE 60V HIGH ACCURACY BUCK
PDF  42 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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ZXLD1371QESTTC датащи(HTML) 29 Page - Diodes Incorporated

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ZXLD1371Q
ZXLD1371Q
Document number: DS37116 Rev. 1 - 2
29 of 42
www.diodes.com
September 2015
© Diodes Incorporated
ZXLD1371Q
Application Information (cont.)
Example 2:
Using the ZXMN6A09KQ (VDS(MAX) = 60V, ID(MAX) = 12.2A):
 QG = 29nC at VGS = 10V
ZXLD1371Q IPEAK = 300mA
Assuming that cumulatively the rise time and fall time can account for a maximum of 10% of the period, the maximum frequency allowed in
this condition is:
tPERIOD = 20*dt
f = 1/ tPERIOD = 515kHz
This frequency is within the recommended frequency range the device can handle, therefore the ZXMN6A09KQ is recommended to be
used with the ZXLD1371Q for frequencies from 300kHz to 500kHz).
The recommended total gate charge for the MOSFET used in conjunction with the ZXLD1371Q is less than 30nC.
Junction Temperature Estimation
Finally, the ZXLD1371Q junction temperature can be estimated using the following equations:
Total supply current of ZXLD1371Q:
IQTOT
IQ f • QG
Where IQ = total quiescent current IQ-IN + IQ-AUX
Power consumed by ZXLD1371Q
PIC = VIN
• (IQ f • Qg
Or in case of separate voltage supply, with VAUX < 15V
PIC = VIN
• IQ-IN + Vaux • (IQ-AUX f • Qg
TJ =
TA + PIC
• JA =
TA + PIC
• (JC + CA)
Where the total quiescent current IQTOT consists of the static supply current (IQ) and the current required to charge and discharge the gate
of the power MOSFET. Moreover the part of thermal resistance between case and ambient depends on the PCB characteristics.
Figure 8. Power derating curve for ZXLD1371
mounted on test board according to JESD51
ns
97
mA
300
nC
29
PEAK
I
g
Q
dt
0
0.5
1
1.5
2
2.5
-40 -25 -10
5
20
35 50 65 80 95 110 125
AMBIENT TEMPERATURE (°C)



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