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ICS8516 датащи(PDF) 4 Page - Integrated Device Technology |
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ICS8516 датащи(HTML) 4 Page - Integrated Device Technology |
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4 / 16 page ![]() LOW SKEW, 1-TO-16 DIFFERENTIAL-TO-LVDS CLOCK DISTRIBUTION CHIP 8516 DATA SHEET 4 REVISION B 6/11/15 TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, V DD = 3.3V±5%, T A = 0°C TO 70°C TABLE 4C. DIFFERENTIAL DC CHARACTERISTICS, V DD = 3.3V±5%, T A = 0°C TO 70°C TABLE 4B. LVCMOS/LVTTL DC CHARACTERISTICS, V DD = 3.3V±5%, T A = 0°C TO 70°C Symbol Parameter Test Conditions Minimum Typical Maximum Units V DD Positive Supply Voltage 3.135 3.3 3.465 V I DD Static Power Supply Current RL = 100 Ω 135 165 mA No Load 60 75 mA Symbol Parameter Test Conditions Minimum Typical Maximum Units I IH Input High Current CLK V IN = VDD = 3.465V 150 µA nCLK V IN = VDD = 3.465V 5 µA I IL Input Low Current CLK V DD = 3.465V, VIN = 0V -5 µA nCLK V DD = 3.465V, VIN = 0V -150 µA V PP Peak-to-Peak Voltage 0.15 1.3 V V CMR Common Mode Input Voltage; NOTE 1, 2 GND + 0.5 V DD - 0.85 V NOTE 1: For single ended applications, the maximum input voltage for CLK, nCLK is V DD + 0.3V. NOTE 2: Common mode voltage is defined ast V IH. Symbol Parameter Test Conditions Minimum Typical Maximum Units V IH Input High Voltage OE1, OE2 2 V DD + 0.3 V V IL Input Low Voltage OE1, OE2 -0.3 0.8 V I IH Input High Current OE1, OE2 V DD = VIN = 3.465V 5 µA I IL Input Low Current OE1, OE2 V DD = 3.465V, VIN = 0V -150 µA ABSOLUTE MAXIMUM RATINGS Supply Voltage, V DD 4.6V Inputs, V I -0.5V to V DD + 0.5 V Outputs, V O -0.5V to V DD + 0.5V Package Thermal Impedance, θ JA 47.9°C/W (0 lfpm) Storage Temperature, T STG -65°C to 150°C NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Charac- teristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. |
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