MMRF1312GS datasheet(1/15 Pages) NXP

номер детали	MMRF1312GS

подробное описание детали	RF Power LDMOS Transistors

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производитель	NXP [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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MMRF1312H MMRF1312HS MMRF1312GS

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These RF power devices are designed for pulse applications operating at

frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse

applications with large duty cycles and long pulses and are ideal for use in high

power military and commercial L--Band radar applications such as IFF and

DME/TACAN.

Typical Short Pulse Performance: In 900–1215 MHz reference circuit,

VDD =52 Vdc, IDQ(A+B) = 100 mA

Frequency

(MHz)

Signal Type

Pout

(W)

Gps

(dB)

D

(%)

900

Pulse

(128 sec, 10% Duty Cycle)

1615 Peak

15.2

54.0

960

1560 Peak

17.3

55.7

1030

1500 Peak

17.8

53.8

1090

1530 Peak

18.0

54.5

1215

1200 Peak

19.2

58.5

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

(W)

Test

Voltage

Result

1030 (1)

Pulse

(128 sec, 10%

Duty Cycle)

> 20:1 at all

Phase Angles

20.2 Peak

(3 dB

Overdrive)

52

No Device

Degradation

1. Measured in 1030 MHz narrowband reference circuit.

Features

 Internally input and output matched for broadband operation and ease of use

 Device can be used in a single--ended, push--pull or quadrature configuration

 Qualified up to a maximum of 52 VDD operation

 High ruggedness, handles > 20:1 VSWR

 Integrated ESD protection with greater negative voltage range for improved

Class C operation and gate voltage pulsing

 Characterized with series equivalent large--signal impedance parameters

Typical Applications

 Air traffic control systems (ATC), including ground--based secondary radars

such as IFF interrogators or transponders

 Distance measuring equipment (DME)

 Tactical air navigation (TACAN)

Document Number: MMRF1312H

Rev. 0, 3/2016

Freescale Semiconductor

Technical Data

900–1215 MHz, 1000 W PEAK, 52 V

AIRFAST RF POWER LDMOS

TRANSISTORS

MMRF1312H

MMRF1312HS

MMRF1312GS

NI--1230GS--4L

MMRF1312GS

NI--1230S--4S

MMRF1312HS

NI--1230H--4S

MMRF1312H

(Top View)

Drain A

31

Figure 1. Pin Connections

42 Drain B

Gate A

Gate B

Note: The backside of the package is the

source terminal for the transistor.

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