MMRF1312GS datasheet(2/15 Pages) NXP

2 / 15 page

RF Device Data

Freescale Semiconductor, Inc.

MMRF1312H MMRF1312HS MMRF1312GS

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

–0.5, +112

Vdc

Gate--Source Voltage

VGS

–6.0, +10

Vdc

Storage Temperature Range

Tstg

– 65to+150

C

Case Operating Temperature Range

–40 to 150

C

Operating Junction Temperature Range (1)

–40 to 225

C

Total Device Dissipation @ TC =25C

Derate above 25C

1053

5.26

W/C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2)

Unit

Thermal Impedance, Junction to Case

Pulse: Case Temperature 64C, 1000 W Peak, 128 sec Pulse Width,

10% Duty Cycle, 50 Vdc, IDQ = 100 mA, 1030 MHz

ZJC

0.017

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2, passes 2500 V

Machine Model (per EIA/JESD22--A115)

B, passes 250 V

Charge Device Model (per JESD22--C101)

IV, passes 2000 V

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (3)

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

Drain--Source Breakdown Voltage

(VGS =0 Vdc, ID =10 A)

V(BR)DSS

112

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS =50 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =112 Vdc, VGS =0 Vdc)

IDSS

—

Adc

On Characteristics

Gate Threshold Voltage (3)

(VDS =10 Vdc, ID = 520 Adc)

VGS(th)

1.3

1.8

2.3

Vdc

Gate Quiescent Voltage (4)

(VDD =50 Vdc, ID = 100 mAdc, Measured in Functional Test)

VGS(Q)

1.5

2.0

2.5

Vdc

Drain--Source On--Voltage (3)

(VGS =10 Vdc, ID =2.6 Adc)

VDS(on)

0.05

0.17

0.35

Vdc

Dynamic Characteristics (3)

Reverse Transfer Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

2.5

—

1. Continuous use at maximum temperature will affect MTTF.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

3. Each side of device measured separately.

4. Measurement made with device in push--pull configuration.

(continued)

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