MMRF1312GS datasheet(3/15 Pages) NXP

номер детали	MMRF1312GS

подробное описание детали	RF Power LDMOS Transistors

PDF	15 Pages

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производитель	NXP [NXP Semiconductors]

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MMRF1312H MMRF1312HS MMRF1312GS

RF Device Data

Freescale Semiconductor, Inc.

Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (1,2) (In Freescale Narrowband Production Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ(A+B) = 100 mA, Pout = 1000 W

Peak (100 W Avg.), f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle

Power Gain

Gps

18.5

19.6

22.0

Drain Efficiency

D

55.5

59.7

—

Input Return Loss

IRL

—

–15

–9

Table 5. Load Mismatch/Ruggedness (In Freescale Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA

Frequency

(MHz)

Signal Type

VSWR

(W)

Test Voltage, VDD

Result

1030

Pulse

(128 sec,

10% Duty Cycle)

> 20:1 at all

Phase Angles

20.2 Peak

(3 dB Overdrive)

No Device

Degradation

Table 6. Ordering Information

Device

Tape and Reel Information

Package

MMRF1312HR5

R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel

NI--1230H--4S, Eared

MMRF1312HSR5

NI--1230S--4S, Earless

MMRF1312GSR5

NI--1230GS--4L, Gull Wing

1. Measurement made with device in push--pull configuration.

2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull

wing (GS) parts.

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