4

RF Device Data

Freescale Semiconductor, Inc.

MMRF1312H MMRF1312HS MMRF1312GS

TYPICAL CHARACTERISTICS

1

020

10

Figure 2. Capacitance versus Drain--Source Voltage

10

Measured with 30 mV(rms)ac @ 1 MHz

Note: Each side of device measured separately.

100

30

40

50

Current and Case Temperature

1.08

1.04

1.02

1

0.98

0.96

100

–50

0

–25

25

50

75

500 mA

1500 mA

100

–2.36

Slope (mV/C)

500

–2.26

1500

–1.84

0.92

0.94

1.06

250

90

Figure 4. MTTF versus Junction Temperature — Pulse

Note:

MTTF value represents the total cumulative operating time

under indicated test conditions.

110

130

150

170

190

210

230

34.04 Amps

39.03 Amps

Pulse Width = 128 sec

10% Duty Cycle