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FAM65V05DF1 датащи(PDF) 12 Page - ON Semiconductor |
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FAM65V05DF1 датащи(HTML) 12 Page - ON Semiconductor |
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12 / 19 page ![]() © 2016 Semiconductor Component Industries, LLC www.onsemi.com FAM65V05DF1 Rev. 1.0 www.fairchildsemi.com 11 Typical Inverter Characteristics 0.00 0.10 0.20 0.30 0.40 0.50 0 20 40 60 80 100 Forward Current IF (A) ERR, VPN=450V, HS ERR, VPN=450V, LS ERR, VPN=300V, HS ERR, VPN=300V, LS 0 25 50 75 100 125 150 175 0 100 200 300 400 500 600 700 V CE (V) IC Module IC Chip Figure 13. Reverse recovery energy DIODE inverter (typical) versus forward current VCC = VBS = 15 V VIN = 0 V ↔ 5 V, Ls=55nH, Inductive Load, TJ=125°C 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 Time Duration (s) ZthJC IGBT Figure 14. Reverse Bias Safe Operating Area IGBT (RBSOA) inverter VCC = VBS = 15 V, Tj=150°C 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 Time Duration (s) ZthJC DIODE Figure 15. Transient thermal impedance IGBT inverter Figure 16. Transient thermal impedance DIODE inverter i: 1 2 3 4 ri [°C/W]: 0.0264 0.0615 0.132 0.05 [s]: 6.04e-6 5.8e-5 1.25e-3 5.14e-3 i: 1 2 3 4 ri [°C/W]: 0.0070 0.1389 0.2439 0.1411 [s]: 1.05e-5 1.31e-4 2.09e-3 5.86e- |
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