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FAM65V05DF1 датащи(PDF) 11 Page - ON Semiconductor

номер детали FAM65V05DF1
подробное описание детали  Automotive 3-Phase IGBT Smart Power Module
PDF  19 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FAM65V05DF1 датащи(HTML) 11 Page - ON Semiconductor

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© 2016 Semiconductor Component Industries, LLC
www.onsemi.com
FAM65V05DF1 Rev. 1.0
www.fairchildsemi.com
10
Typical Inverter Characteristics
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
VCE [V]
TJ=25 C
TJ=125 C
TJ=150 C
Figure 9. Output characteristics IGBT inverter (typical)
VCC = VBS = 15 V, VIN=5 V
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
VCE [V]
TJ=25 C
TJ=125 C
TJ=150 C
Figure 10. Forward characteristics DIODE inverter
(typical)
VIN=0 V
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
0
20
40
60
80
100
Collector Current IC (A)
EON, VPN=450V
EOFF, VPN=450V
EON, VPN=300V
EOFF, VPN=300V
Figure 11. Switching losses IGBT inverter High-Side
(typical) versus collector current
VCC = VBS = 15 V
VIN = 0 V
↔ 5 V, Ls=55 nH, Inductive Load, TJ=125°C
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
0
20
40
60
80
100
Collector Current IC (A)
EON, VPN=450V
EOFF, VPN=450V
EON, VPN=300V
EOFF, VPN=300V
Figure 12. Switching losses IGBT inverter Low-Side
(typical) versus collector current
VCC = VBS = 15 V
VIN = 0 V
↔ 5 V, Ls=55 nH, Inductive Load, TJ=125°C



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