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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FAM65V05DF1 датащи(PDF) 6 Page - ON Semiconductor |
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FAM65V05DF1 датащи(HTML) 6 Page - ON Semiconductor |
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6 / 19 page  © 2016 Semiconductor Component Industries, LLC www.onsemi.com FAM65V05DF1 Rev. 1.0 www.fairchildsemi.com 5 Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified) Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. Inverter Part Symbol Parameter Condition Rating Unit VPN Supply voltage Applied between P- NU, NV, NW 500 V VPN(Surge) Supply Voltage (surge) Applied between P- NU, NV, NW dI/dt ≤ 3A/ns 575 V VCES Collector-emitter Voltage at the IGBT/diode TJ=25°C 650 V ± IC IGBT continuous collector current TC = 100°C, TJmax=175°C (Note1) 50 A ± ICP IGBT peak collector pulse current TC = 25°C, TJmax=175°C, VCC=VBS=15V, less than 1ms (Note 6) 150 A PC Collector Dissipation TC = 25°C per IGBT 333 W TJ Junction Temperature IGBT/Diode -40 ~ +175 °C Driver IC -40 ~ +150 °C Control Part Symbol Parameter Condition Rating Unit VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V VBS High-side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM -0.3 ~ VCC+0.3 V VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC+0.3 V IFO Fault Output Current Sink Current at VFO Pin 5 mA VSC Current Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC+0.3 V VTS Temperature sense unit -0.3 ~ 2/3 x VCC) V Total System Symbol Parameter Condition Rating Unit TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection Pins to heat sink plate 2500 Vrms TLEAD Max lead temperature at the base of the package during pcb assembly No remelt of internal solder joints 200 °C Package Characteristics Symbol Parameter Conditions Typ. Max. Units Rth(j-c)Q Junction to Case Thermal Resistance (2) Inverter IGBT part (per IGBT) - 0.45 °C/W Rth(j-c)F Inverter FWD part (per DIODE) - 0.85 °C/W L Package Stray Inductance P to NU, NV, NW (3) 24 - nH Notes: 1. Current limited by package terminal, defined by design 2. Case temperature measured below the package at the chip center, compliant with MIL STD 883-1012.1 (single chip heating), DBC discoloration allowed, please refer to application note AN-9190 (Impact of DBC Oxidation on SPM ® Module Performance) 3. Stray inductance per phase measured per IEC 60747-15 |
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