© 2016 Semiconductor Component Industries, LLC

www.onsemi.com

FAM65V05DF1 Rev. 1.0

www.fairchildsemi.com

6

Electrical Specifications

Symbol

Parameters

Conditions

Min

Typ

Max

Unit

Collector-Emitter Saturation

Voltage

-

1.65

-

V

-

1.9

2.4

V

FWD Forward Voltage

-

2.1

-

V

1.9

2.5

V

HS

High Side Switching Times

V ↔ 5V, Ls=55 nH,

Inductive Load

(4 , 5)

-

0.73

-

μs

-

0.12

-

-

0.80

-

-

0.14

-

-

0.10

-

High Side Switching Times

V ↔ 5V, Ls=55 nH,

Inductive Load

(4, 5)

-

0.70

-

μs

-

0.15

-

-

0.87

-

-

0.19

-

-

0.20

-

LS

Low Side Switching Times

V ↔ 5 V, Ls=55 nH,

Inductive Load

(4, 5)

-

0.68

-

μs

-

0.20

-

-

0.86

-

-

0.19

-

-

0.14

-

Low Side Switching Times

V ↔ 5 V, Ls=55 nH,

Inductive Load

(4,5)

-

0.64

-

μs

-

0.24

-

-

0.88

-

-

0.23

-

-

0.20

-

SCWT

Short Circuit withstand time

(6)

-

5

-

μs

Collector-Emitter Leakage

Current for IGBT and diode in

parallel

-

3

-

μA

-

150

1500

μA

Notes:

4.

of IGBT itself under the given gate driving condition internally. Refer to Figure 6 for detailed information

5.

Stray inductance Ls is sum of stray inductance of module & setup

6.

Verified by design and bench-testing only