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MP6528 датащи(PDF) 13 Page - Monolithic Power Systems |
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MP6528 датащи(HTML) 13 Page - Monolithic Power Systems |
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13 / 17 page ![]() MP6528 – 5V TO 60V, H-BRIDGE GATE DRIVER MP6528 Rev. 1.03 www.MonolithicPower.com 13 6/20/2017 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. APPLICATIONS INFORMATION VIN Input Voltage The VIN pin supplies all power to the device. It must be properly bypassed with a capacitor to ground – see below for specific recommendations. The normal operating range of VIN is between 5V and 60V. VIN should never be allowed to exceed the absolute maximum ratings, even in a short term transient condition, or damage to the device may result. In some cases – especially where mechanical energy can turn a motor into a generator – it may be necessary to use some form of overvoltage protection, such as a TVS diode, between VIN and ground. Component Selection MOSFET selection Correctly selecting the power MOSFETs used to drive a motor is crucial to designing a successful motor drive. The first requirement is that the MOSFET must have a VDS breakdown voltage that is higher than the supply voltage. It is recommended that considerable margin – 10-15 volts - be added to prevent MOSFET damage from transient voltages that can be caused by parasitic inductances in the PCB layout and wiring. For example, for 24V power supply applications, MOSFETs having a breakdown voltage of 40V- 60V minimum are recommended. More margin is desirable in high current applications, as the transients caused by parasitic inductances may be larger. Also, there are conditions like regenerative braking that can inject current back into the power supply; care must be taken that this does not cause an increase in the power supply voltage large enough to damage components. The MOSFETs must be able to safely pass the current needed to run the motor. The highest current condition, which is normally when the motor is first started or stalled, needs to be supported. This is typically called the “stall current” of the motor. Related to the current capability of the MOSFET is the rds(on). This is the resistance of the MOSFE T when it is in the fully “turned on” state. The MOSFET will dissipate power proportional to the rds(on) and the motor current: P=I 2R. The rds(on) needs to be selected so that for the desired motor current, the heat generated in this power can be safely dissipated. In some cases, this may require special PCB design considerations and/or external heatsinks to be used for the MOSFETs. Some consideration should be made for the safe operating area (SOA) of the MOSFETs in fault conditions, such as a short circuit. The IC will act quickly in the event of a short, but there is still a very short time (on the order of 3µS) where large currents can flow in the MOSFETs while the protection circuits recognize the fault and disable the outputs. External Capacitor Selection The MP6528 has a unique feature in that it can provide a gate drive voltage (VREG) of 10-12V even if the input supply voltage drops as low as 5V. This gate drive voltage is generated by a charge pump inside the part, which uses external capacitors. The charge pump flying capacitor, CCP, should have a capacitance of 470nF. It needs to be rated to withstand the maximum VIN power supply voltage. An X7R or X5R ceramic capacitor is recommended. With a 470nF capacitor, VREG can output approximately 10mA when VIN is 5V. If operation below 10V is not needed, a 220nF capacitor can be used To provide the large peak currents needed to turn on the HS MOSFET, bootstrap capacitors are used. These capacitors are charged when the output is driven low, then the charge in the bootstrap capacitor is used to turn on the HS MOSFET when the output is driven high. (Note that an internal charge pump will keep the bootstrap capacitor changed when the output is held high for an extended period). The bootstrap capacitors are selected depending on the MOSFET total gate charge. When the HS MOSFET is turned on, the charge stored in the bootstrap capacitor is transferred to the HS MOSFET gate. As a simplified approximation, |
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