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MP6528 датащи(PDF) 11 Page - Monolithic Power Systems

номер детали MP6528
подробное описание детали  5V to 60V, H-Bridge Gate Driver
PDF  17 Pages
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производитель  MPS [Monolithic Power Systems]
домашняя страница  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MP6528 датащи(HTML) 11 Page - Monolithic Power Systems

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MP6528 – 5V TO 60V, H-BRIDGE GATE DRIVER
MP6528 Rev. 1.03
www.MonolithicPower.com
11
6/20/2017
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2017 MPS. All Rights Reserved.
OPERATION
The MP6528 is an H-bridge gate driver that
drives two N-channel MOSFET half-bridges, with
0.8A source and 1A sink current capability.
It
operates over a wide input voltage range of 5V to
60V, generating a boosted gate drive voltage
when the input supply is below 12V. The MP6528
features a low-power sleep mode, which disables
the device and draws a very low supply current.
The MP6528 provides several flexible functions,
such as adjustable dead-time control and over-
current protection, which allow the device to
cover a wide range of application fields.
Power-Up Sequence
The power-up sequence is initiated by the
application of voltage to VIN pin.
To initiate
power-up, VIN must be above the undervoltage
lockout threshold VUVLO.
After power-up begins, the VREG supply starts
operating.
VREG must rise above V
REG_RISE
before the device becomes functional.
The power-up process takes between 1mS and
2mS, after which the MP6528 will respond to
logic inputs and drive the outputs.
Gate Drive Power Supplies
Gate drive voltages are generated from the input
power, VIN.
A regulated charge pump doubler
circuit supplies a voltage of approximately 11.5V
at the VREG pin. This voltage is used for the
low-side gate drive supply.
The charge pump
requires external capacitors between the CPA
and CPB pins, and from VREG to ground.
The high side gate drive is generated by a
combination of a bootstrap capacitor and an
internal “trickle” charge pump.
Bootstrap
capacitors are charged to the VREG voltage
when the low side MOSFET is turned on. This
charge is then used to drive the high side
MOSFET gate when it is turned on.
To keep the bootstrap capacitors charged and
allow operation at 100% duty cycle, an internal
“trickle” charge pump supplies a small current
(about 5µA) to overcome leakages that would
discharge the bootstrap capacitors.
Refer to the applications information section for
details on the selection of external components.
Sleep Mode (nSLEEP Input)
Driving nSLEEP low will put the device into a
low-power sleep state. In this state, all the
internal circuits are disabled, and all inputs are
ignored. nSLEEP has an interval pulldown, so it
must be driven high for the device to operate.
When exiting sleep mode, the part will initiate the
power-up sequence described above.
Input Logic
The ENx input pins controls both the high- and
low-side gate drive outputs of each phase. When
ENx is low, the gate drive outputs are pulled low,
and the PWMx input of that phase is ignored.
When ENx is high, the gate drive outputs are
enabled, and the PWM input is recognized. Refer
to Table 1 for the logic truth table.
Table 1: Input Logic Truth Table
ENx
PWMx
SHx
H
H
VIN
H
L
GND
L
x
High impedance
Low-side Automatic Turn-on
To ensure that the bootstrap capacitor is charged
enough to turn on the high-side MOSFET, each
time that the ENx pin transitions from low to
active high, the low-side MOSFET for that phase
is turned on for a short pulse (tLS). This occurs
regardless of the state of the PWMx input pin.
nFAULT
The nFAULT output pin reports to the system
when a fault condition (such as an output short
circuit,
overcurrent,
or
overtemperature)
is
detected. nFAULT is an open-drain output, and it
is driven low when a fault condition occurs. If the
fault condition is released, nFAULT is pulled high
by an external pull-up resistor.
Short Circuit Protection (VDS Sensing)
To protect the power stage from damage due to
high
currents,
a
VDS
sensing
circuitry
is
implemented in the MP6528. The voltage drop
across each MOSFET is sensed. (This voltage is
proportional to the RDS-ON of the MOSFET and
the IDS current passing through it). If this voltage



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