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MP6528 датащи(PDF) 11 Page - Monolithic Power Systems |
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MP6528 датащи(HTML) 11 Page - Monolithic Power Systems |
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11 / 17 page ![]() MP6528 – 5V TO 60V, H-BRIDGE GATE DRIVER MP6528 Rev. 1.03 www.MonolithicPower.com 11 6/20/2017 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. OPERATION The MP6528 is an H-bridge gate driver that drives two N-channel MOSFET half-bridges, with 0.8A source and 1A sink current capability. It operates over a wide input voltage range of 5V to 60V, generating a boosted gate drive voltage when the input supply is below 12V. The MP6528 features a low-power sleep mode, which disables the device and draws a very low supply current. The MP6528 provides several flexible functions, such as adjustable dead-time control and over- current protection, which allow the device to cover a wide range of application fields. Power-Up Sequence The power-up sequence is initiated by the application of voltage to VIN pin. To initiate power-up, VIN must be above the undervoltage lockout threshold VUVLO. After power-up begins, the VREG supply starts operating. VREG must rise above V REG_RISE before the device becomes functional. The power-up process takes between 1mS and 2mS, after which the MP6528 will respond to logic inputs and drive the outputs. Gate Drive Power Supplies Gate drive voltages are generated from the input power, VIN. A regulated charge pump doubler circuit supplies a voltage of approximately 11.5V at the VREG pin. This voltage is used for the low-side gate drive supply. The charge pump requires external capacitors between the CPA and CPB pins, and from VREG to ground. The high side gate drive is generated by a combination of a bootstrap capacitor and an internal “trickle” charge pump. Bootstrap capacitors are charged to the VREG voltage when the low side MOSFET is turned on. This charge is then used to drive the high side MOSFET gate when it is turned on. To keep the bootstrap capacitors charged and allow operation at 100% duty cycle, an internal “trickle” charge pump supplies a small current (about 5µA) to overcome leakages that would discharge the bootstrap capacitors. Refer to the applications information section for details on the selection of external components. Sleep Mode (nSLEEP Input) Driving nSLEEP low will put the device into a low-power sleep state. In this state, all the internal circuits are disabled, and all inputs are ignored. nSLEEP has an interval pulldown, so it must be driven high for the device to operate. When exiting sleep mode, the part will initiate the power-up sequence described above. Input Logic The ENx input pins controls both the high- and low-side gate drive outputs of each phase. When ENx is low, the gate drive outputs are pulled low, and the PWMx input of that phase is ignored. When ENx is high, the gate drive outputs are enabled, and the PWM input is recognized. Refer to Table 1 for the logic truth table. Table 1: Input Logic Truth Table ENx PWMx SHx H H VIN H L GND L x High impedance Low-side Automatic Turn-on To ensure that the bootstrap capacitor is charged enough to turn on the high-side MOSFET, each time that the ENx pin transitions from low to active high, the low-side MOSFET for that phase is turned on for a short pulse (tLS). This occurs regardless of the state of the PWMx input pin. nFAULT The nFAULT output pin reports to the system when a fault condition (such as an output short circuit, overcurrent, or overtemperature) is detected. nFAULT is an open-drain output, and it is driven low when a fault condition occurs. If the fault condition is released, nFAULT is pulled high by an external pull-up resistor. Short Circuit Protection (VDS Sensing) To protect the power stage from damage due to high currents, a VDS sensing circuitry is implemented in the MP6528. The voltage drop across each MOSFET is sensed. (This voltage is proportional to the RDS-ON of the MOSFET and the IDS current passing through it). If this voltage |
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