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PSOC4100 датащи(PDF) 24 Page - Cypress Semiconductor

номер детали PSOC4100
подробное описание детали  Programmable System-on-Chip (PSoC짰)
PDF  37 Pages
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производитель  CYPRESS [Cypress Semiconductor]
домашняя страница  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

PSOC4100 датащи(HTML) 24 Page - Cypress Semiconductor

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Automotive PSoC® 4: PSoC 4100
Family Datasheet
Document Number: 001-93576 Rev. *F
Page 24 of 37
Memory
System Resources
Power-on-Reset (POR) with Brown Out
Table 26. Flash DC Specifications
Spec ID
Parameter
Description
Min
Typ
Max
Units
Details/Conditions
SID173
VPE
Erase and program voltage
1.71
5.5
V
Table 27. Flash AC Specifications
Spec ID
Parameter
Description
Min
Typ
Max
Units
Details/Conditions
SID174
TROWWRITE[3]
Row (block) write time (erase and
program)
20
ms
Row (block) = 128 bytes. –40
°C ≤ TA ≤ 85 °C
26
ms
Row (block) = 128 bytes. –40
°C ≤ TA ≤ 105 °C
SID175
TROWERASE[3]
Row erase time
13
ms
SID176
TROWPROGRAM[3] Row program time after erase
7
ms
–40 °C ≤ TA ≤ 85 °C
13
ms
–40 °C ≤ TA ≤ 105 °C
SID178
TBULKERASE[3]
Bulk erase time (32 KB)
35
ms
SID180
TDEVPROG[3]
Total device program time
7
seconds Guaranteed by characterization
SID181
FEND
Flash endurance
100 K
cycles Guaranteed by characterization
SID182
FRET
Flash retention. TA ≤ 55 °C, 100 K
P/E cycles
20
years Guaranteed by characterization
SID182A
Flash retention. TA ≤ 85 °C, 10 K
P/E cycles
10
years Guaranteed by characterization
SID182B
FRETQ
Flash retention. TA ≤ 105 °C,
10K P/E cycles, < three years at
TA > 85 °C.
10
20
Guaranteed by character-
ization.
Table 28. Imprecise Power On Reset (PRES)
Spec ID
Parameter
Description
Min
Typ
Max
Units
Details/Conditions
SID185
VRISEIPOR
Rising trip voltage
0.80
1.45
V
Guaranteed by characterization
SID186
VFALLIPOR
Falling trip voltage
0.75
1.4
V
Guaranteed by characterization
SID187
VIPORHYST
Hysteresis
15
200
mV
Guaranteed by characterization
Table 29. Precise Power On Reset (POR)
Spec ID
Parameter
Description
Min
Typ
Max
Units
Details/Conditions
SID190
VFALLPPOR
BOD trip voltage in active and
sleep modes
1.64
V
Full functionality between 1.71 V
and BOD trip voltage is
guaranteed by characterization
SID192
VFALLDPSLP
BOD trip voltage in Deep Sleep
1.4
V
Guaranteed by characterization
BID55
Svdd
Maximum power supply ramp
rate
––
67
kV/sec
Note
3. It can take as much as 20 milliseconds to write to Flash. During this time the device should not be Reset, or Flash operations will be interrupted and cannot be relied
on to have completed. Reset sources include the XRES pin, software resets, CPU lockup states and privilege violations, improper power supply levels, and watchdogs.
Make certain that these are not inadvertently activated.



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