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INA231AIYFDR датащи(PDF) 7 Page - Texas Instruments |
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INA231AIYFDR датащи(HTML) 7 Page - Texas Instruments |
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7 / 44 page ![]() Shunt Gain Error (m%) G005 0 100 200 300 400 500 −50 −25 0 25 50 75 100 125 Temperature (°C) G006 140 150 160 170 −50 −25 0 25 50 75 100 125 Temperature (°C) G004 −20 −10 0 10 −50 −25 0 25 50 75 100 125 Temperature (°C) G003 Input Offset Voltage (µV) G002 −60 −50 −40 −30 −20 −10 0 1 10 100 1k 10k 100k Frequency (Hz) G001 7 INA231 www.ti.com SBOS644B – FEBRUARY 2013 – REVISED AUGUST 2017 Product Folder Links: INA231 Submit Documentation Feedback Copyright © 2013–2017, Texas Instruments Incorporated 7.7 Typical Characteristics at TA = 25°C, VS = 3.3 V, VIN+ = 12 V, VSENSE = (VIN+ – VIN–) = 0 mV, and VBUS = 12 V (unless otherwise noted) Conversion time = 1.1 ms Figure 2. Frequency Response Figure 3. Shunt Input Offset Voltage Production Distribution Figure 4. Shunt Input Offset Voltage vs Temperature Figure 5. Shunt Input Common-Mode Rejection Ratio vs Temperature Figure 6. Shunt Input Gain Error Production Distribution Figure 7. Shunt Input Gain Error vs Temperature |
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