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FDMF2011 датащи(PDF) 28 Page - ON Semiconductor |
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FDMF2011 датащи(HTML) 28 Page - ON Semiconductor |
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28 / 31 page ![]() © 2016 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF2011 Rev.1.0 27 The gate-to-ground impedance is the parallel combination of the gate drive (ZG_DRV) and the MOSFET gate-to-source (ZMOS_Gate) paths. As dVDS/dt increases, the more favorable path for displacement current is through the capacitive gate-source (CGS) path versus the highly inductive and resistive gate drive loop. So impedence through gate driver should be minimized. The severity of the shoot through current is difficult to predict. |
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