FDMF2011 datasheet(25/31 Pages) ONSEMI

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FDMF2011 Rev.1.0

Application Information:

The FDMF2011 is designed as a non-inverting

power stage, where the Power MOSFET

response (SW node) is designed to follow to

HI/LI commands. The device is well-suited to

be used in a wide variety of applications, such

as: Half and Full-Bridge DC-DC converters,

Active Clamp Forward converters, rectifier

circuits,

and

motor

drive

power

stages.

However, various applications and topologies

can place unique stresses on the module.

There

are

few

basic

power-stage

requirements

needed

ensure

proper

operation.

Module Power Dissipation

As previously mentioned, the FDMF2011 is a

multi-chip

module

(MCM).

The

module

consists

three

die

(HS

MOSFET,

MOSFET and driver IC). Each die dissipates

heat in normal operation resulting from power

loss. The power MOSFETs can generate

power loss from conduction and switching

losses while the driver IC dissipated loss from

bias, boot diode conduction and from the

driver output stage sinking and sourcing power

MOSFET

gate

currents

and

operating

frequency. The amount of heat dissipated by

any die is largely dependent on the operating

conditions. The close physical placement of

the three die inside of the package translates

into strong thermal coupling between die.

Ideally, a thermal camera should be used to

monitor the FDMF2011 during the engineering

development phase. This can help ensure the

module operates within the absolute maximum

ratings specified in this datasheet.

Operating Modes

The FDMF2011 can reliably operate while

driving various load impedances. However,

the relatively large number of applications can

result in the module operating in various

modes.

Common

applications

such

switching power converters and motor drives

can

place

the

FDMF2011

into

different

operating modes.

The various operating

modes

will

change

the

response

the

MOSFET voltage and current stresses and

power losses as well as the gate driver dead

time response. A few operating modes are

listed below.

H-bridge Motor Drive

In this operating mode, it allows bi-directional

current flow through motor by enabling diagonal

MOSFETs to make current flow in one or the

other direction. Inductor current will not tolerate

abrupt

changes

either

when

charged

discharged and alternate path is required to

protect switches during dead-time. The path can

be made either MOSFET body-diode conducting

as soon as switches are disabled or enabling

opposite high-side or low-side switch to carry the

recirculation

current

while

avoiding

shoot-

through. Utilizing MOSFET channel is often

much more efficient way to handle the decaying

current due to lower conduction power loss than

body-diode forward drop loss.

Figure 65. H-bridge motor drive

FDMF2011 Power Dissipation

The maximum motor drive current can be

obtained from estimating total power dissipation

of motor driver. There are a number of factors

which limit actual current level such as motor

ratting, driver IC, PCB construction, ambient

temperature and given application. All of power

dissipation components must be considered to

get reliable operation at the specific application.

There is obvious power dissipations listed below

in single H-bridge motor application.

•

Conduction loss – Generally biggest

power loss which is dissipated due to the

RDSON and its temperature coefficient

must be considered in the calculation

OUT

LS_temp

DS(ON)

HS_temp

DS(ON)

COND

)

⋅

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