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производитель номер детали датащи подробное описание детали Cree, Inc PXAC241002FC-V1-R0 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz Search Partnumber : Start with "PXAC241002FC-V1-R0" - Total : 59 ( 1/3 Page) Cree, Inc PXAC241002FC-V1-R2 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz PXAC241002FCV1R0 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz PXAC241002FCV1R2 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz PXAC241002FC 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz Infineon Technologies A... PXAC241702FC 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 Cree, Inc PXAC241702FC 577Kb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Infineon Technologies A... PXAC241702FCV1R0 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 PXAC241702FCV1R0XTMA1 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 PXAC241702FCV1R250 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 PXAC241702FCV1R250XTMA1 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 Cree, Inc PXAC243502FV 543Kb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Infineon Technologies A... PXAC243502FV 1Mb/10P High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2015-04-13 PXAC243502FVV1R0 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC243502FVV1R0XTMA1 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC243502FVV1R250 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC243502FVV1R250XTMA1 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC243502FV 1Mb/10P High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2015-04-13 PXAC243502FV 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC200902FC 489Kb/10P Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz Rev. 02.1, 2016-02-11

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