| производитель | номер детали | датащи | подробное описание детали |
 Infineon Technologies A... |
PTF240101S
|
243Kb / 12P |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz
Rev. 05, 2007-04-12 |
|
PXFC211507SC
|
201Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz
Rev. 02, 2015-03-03 |
|
PXFC191507FC
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ??1990 MHz
Rev. 02.1, 2016-06-22 |
|
PTAC240502FC
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz
Rev. 02.3, 2016-06-21 |
 Cree, Inc |
PXAC241702FC
|
577Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
|
|
PXFC191507FC
|
517Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ??1990 MHz
|
|
PTAC240502FC
|
606Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz
|
|
PXAC241002FC
|
279Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
|
 WOLFSPEED, INC. |
PTAC240502FC_V1
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz
Rev. 05, 2023-06-28 |
|
PXFC191507FC
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz
Rev. 04, 2023-06-28 |