производитель | номер детали | датащи | подробное описание детали |
Cree, Inc |
PTAC240502FC
|
606Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz
|
Infineon Technologies A... |
PTAC240502FC
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz
Rev. 02.3, 2016-06-21 |
Cree, Inc |
PXAC241702FC
|
577Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
|
Infineon Technologies A... |
PXAC241702FC
|
1Mb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
Rev. 02.1, 2016-06-22 |
WOLFSPEED, INC. |
PTAC240502FC_V1
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz
Rev. 05, 2023-06-28 |
Cree, Inc |
PXAC261002FC
|
634Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
|
Infineon Technologies A... |
PXAC261002FC
|
162Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
Rev. 03.3, 2016-06-15 |
PTF240101S
|
243Kb / 12P |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz
Rev. 05, 2007-04-12 |
PTFC210202FC
|
655Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz
Rev. 03.4, 2016-06-22 |
Cree, Inc |
PTFC210202FC
|
700Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
|