поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

DMC3025LSDQ-13 датащи(PDF) 4 Page - Diodes Incorporated

номер детали DMC3025LSDQ-13
подробное описание детали  30V COMPLEMENTARY ENHANCEMENT MODE MOSFET
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMC3025LSDQ-13 датащи(HTML) 4 Page - Diodes Incorporated

  DMC3025LSDQ-13 Datasheet HTML 1Page - Diodes Incorporated DMC3025LSDQ-13 Datasheet HTML 2Page - Diodes Incorporated DMC3025LSDQ-13 Datasheet HTML 3Page - Diodes Incorporated DMC3025LSDQ-13 Datasheet HTML 4Page - Diodes Incorporated DMC3025LSDQ-13 Datasheet HTML 5Page - Diodes Incorporated DMC3025LSDQ-13 Datasheet HTML 6Page - Diodes Incorporated DMC3025LSDQ-13 Datasheet HTML 7Page - Diodes Incorporated DMC3025LSDQ-13 Datasheet HTML 8Page - Diodes Incorporated DMC3025LSDQ-13 Datasheet HTML 9Page - Diodes Incorporated Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 11 page
background image
DMC3025LSDQ
Document number: DS40186 Rev. 1 - 2
4 of 11
www.diodes.com
October 2017
© Diodes Incorporated
DMC3025LSDQ
Electrical Characteristics P-CHANNEL
– Q1 (@T
A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
-1
μA
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(TH)
-1.0
-2.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
38
45
m
VGS = -10V, ID = -5.2A
65
85
VGS = -4.5V, ID = -4A
Forward Transfer Admittance
|YFS|
5
S
VDS = -5V, ID = -5.2A
Diode Forward Voltage
VSD
-0.7
-1.2
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
CISS
590
pF
VDS = -25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
COSS
69
pF
Reverse Transfer Capacitance
CRSS
53
pF
Gate resistance
RG
11
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
QG
5.1
nC
VDS = -15V, ID = -6A
Total Gate Charge (VGS = 10V)
QG
10.5
nC
Gate-Source Charge
QGS
1.8
nC
Gate-Drain Charge
QGD
1.9
nC
Turn-On Delay Time
tD(ON)
6.8
ns
VDD = -15V, VGS = -10V,
RG = 6Ω, ID = -1A
Turn-On Rise Time
tR
4.9
ns
Turn-Off Delay Time
tD(OFF)
28.4
ns
Turn-Off Fall Time
tF
12.4
ns
Reverse Recovery Time
tRR
14
ns
IF = 12A, di/dt = 500A/μs
Reverse Recovery Charge
QRR
11
nC
Notes:
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.



Html Pages

1 2 3 4 5 6 7 8 9 10 11


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com