DMC3025LSDQ

Document number: DS40186 Rev. 1 - 2

8 of 11

www.diodes.com

October 2017

© Diodes Incorporated

DMC3025LSDQ

0

0.02

0.04

0.06

0.08

0.10

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

J



Figure 19. On-Resistance Variation with Temperature

V

= -10V

I =

A

GS

D

-10

V

=

5V

I =

A

GS

D

-4.

-5

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

Figure 20. Gate Threshold Variation vs. Ambient Temperature

A

0

4

8

12

16

20

0.4

0.6

0.8

1.0

1.2

1.4

-V

, SOURCE-DRAIN VOLTAGE (V)

Figure 21. Diode Forward Voltage vs. Current

SD

10

1,000

10,000

100

0

5

10

15

20

25

30

-V

, DRAIN-SOURCE VOLTAGE (V)

Figure 22. Typical Junction Capacitance

DS

f = 1MHz

0

2

4

6

8

10

12

Q , TOTAL GATE CHARGE (nC)

Figure 23. Gate-Charge Characteristics

g

0

2

4

6

8

10

R

Limited

DS(on)

DC

P

= 10s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

P

= 10 s

W

µ

T

= 150°C

T = +25°C

J(max)

A

Single Pulse

P

= 1s

W

0.1

1

10

100

-V

, DRAIN-SOURCE VOLTAGE (V)

Figure 24. SOA, Safe Operation Area

DS

0.01

0.1

1

10

100