DMC3025LSDQ-13 datasheet(3/11 Pages) DIODES

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DMC3025LSDQ

Document number: DS40186 Rev. 1 - 2

3 of 11

www.diodes.com

October 2017

DMC3025LSDQ

Electrical Characteristics N-CHANNEL

– Q2 (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

μA

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS

—

±1

μA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(TH)

1.0

—

2.0

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

Ω

VGS = 10V, ID = 7.4A

—

VGS = 4.5V, ID = 6A

Forward Transfer Admittance

|YFS|

—

VDS = 5V, ID = 10A

Diode Forward Voltage

VSD

—

0.70

1.2

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

CISS

—

501

—

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Gate Resistance

—

1.84

—

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

—

4.6

—

VDS = 15V, ID = 10A

Total Gate Charge (VGS = 10V)

—

9.8

—

Gate-Source Charge

QGS

—

1.6

—

Gate-Drain Charge

QGD

—

2.0

—

Turn-On Delay Time

tD(ON)

—

3.9

—

VDD = 15V, VGS = 10V,

RG = 6Ω, ID = 1A

Turn-On Rise Time

—

4.2

—

Turn-Off Delay Time

tD(OFF)

—

16.6

—

Turn-Off Fall Time

—

5.8

—

Reverse Recovery Time

tRR

—

5.5

—

IF = 12A, di/dt = 500A/μs

Reverse Recovery Charge

QRR

—

2.6

—

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