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LT4351CMS датащи(PDF) 9 Page - Linear Technology

номер детали LT4351CMS
подробное описание детали  MOSFET Diode-OR Controller
PDF  20 Pages
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производитель  LINER [Linear Technology]
домашняя страница  http://www.linear.com
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LT4351CMS датащи(HTML) 9 Page - Linear Technology

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LT4351
9
sn4351 4351fs
APPLICATIO S I FOR ATIO
Setting Fault Thresholds
The gate drive amplifier implements the ideal diode func-
tion. The fault comparators (UV and OV) prevent out of
range input voltages from affecting the output by disabling
the amplifier during these conditions. Think of the UV and
OV as gating the ideal diode function, something a regular
diode can’t do.
A resistive divider from VIN to UV and one from VIN to OV
are the usual way of setting the FAULT thresholds. For UV
the resistor values are set by:
R
UV
I
R
V
UV
V
R
HYST
UVHYST
UV
FAULT
UV
2
12
=
=
where UVHYST is the desired undervoltage hysteresis at
the input. UVFAULT is the desired undervoltage trip voltage
at the input. VUV is the part undervoltage trip point (0.3V)
and IHYSTUV is the undervoltage hysteresis current (10µA).
See Figure 1.
The divider on the OV pin is a straightforward resistive
divider (Figure 2):
R
OV
V
R
R
V
R R Divider Current
B
FAULT
OV
A
A
AB
= 


=
.
,
1
03
where OVFAULT is the desired overvoltage trip point at the
input and VOV is the OV pin threshold (0.3V). The OV pin
has 7mV of voltage hysteresis at room.
It is possible to do both dividers together using only three
resistors though with more interdependence in compo-
nents (Figure 3). The input bias current for UV and OV is
less than 200nA, so keep resistor values less than 10k.
R2
R1
UV
IHYS
10
µA
VUV
300mV
VIN
UV TURNING ON
UV TURNING OFF
R2
R1
UV
IHYS
10
µA
VUV
300mV
4351 F01
VIN
Figure 1
RB
RA
OV
VOV
300mV
4351 F02
VIN
Figure 2
R2
R3
R1
OV
UV
4351 F03
VIN
Figure 3
C1
R2A
R2B
R1
UV
4351 F04
VIN
Figure 4
actively low. In the event of VDD collapse there still is an
active pull-down (though of lesser strength) of GATE
powered from OUT, guaranteeing turn off.
The on-chip boost regulator uses a constant off-time
control scheme. When VDD is below the regulation trip
voltage, the switch turns on after a 600ns off-time. When
the switch turns on current ramps up in the inductor until
the current limit is reached (450mA). The switch turns off
and the inductor’s current flows through the external
diode to charge up the VDD capacitor. If VDD is still too low,
the switch turns on again after a fixed off-time of 600ns.
The boost regulator regulates VDD to approximately 10.7V
above VIN. When VDD is above this level, the SW transistor
turn-on is disabled. When VDD falls below this level by the
hysteresis level, the SW transistor is allowed to turn on.
There is approximately 0.15V of hysteresis.
OPERATIO



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