PB4350 datasheet(4/12 Pages) PHILIPS

номер детали	PB4350

подробное описание детали	50 V low VCEsat NPN transistor

PDF	12 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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4 / 12 page

2003 May 13

Philips Semiconductors

Product speciﬁcation

50 V low VCEsat NPN transistor

PBSS4350Z

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 50 V; IE =0

−−

100

VCB = 50 V; IE = 0; Tj = 150 °C

−−

µA

IEBO

emitter-base cut-off current

VEB =5V; IC =0

−−

100

hFE

DC current gain

VCE =2V; IC = 500 mA

200

−−

VCE =2V; IC = 1 A; note 1

200

−−

VCE =2V; IC = 2 A; note 1

100

−−

VCEsat

collector-emitter saturation

voltage

IC = 500 mA; IB =50mA

−−

IC = 1 A; IB =50mA

−−

170

IC = 2 A; IB = 200 mA; note 1

−−

290

RCEsat

equivalent on-resistance

IC = 2 A; IB = 200 mA; note 1

−

110

<145

Ω

VBEsat

base-emitter saturation voltage

IC = 2 A; IB = 200 mA; note 1

−−

1.2

VBEon

base-emitter turn-on voltage

VCE =2V; IC = 1 A; note 1

−−

1.1

transition frequency

IC = 100 mA; VCE = 5 V; f = 100 MHz 100

−−

MHz

collector capacitance

VCB = 10 V; IE =Ie = 0; f = 1 MHz

−−

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