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PB4350 датащи(PDF) 2 Page - NXP Semiconductors |
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PB4350 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 2003 May 13 2 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z FEATURES • Low collector-emitter saturation voltage • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat generation • Reduced PCB area requirements compared to DPAK. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – Linear voltage regulation (LDO). • Peripheral drivers – Driver in low supply voltage applications, e.g. lamps, LEDs – Inductive load driver, e.g. relays, buzzers, motors. DESCRIPTION NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z. MARKING TYPE NUMBER MARKING CODE PBSS4350Z PB4350 PINNING PIN DESCRIPTION 1 base 2 collector 3 emitter 4 collector handbook, halfpage 4 12 3 MAM287 Top view 3 2, 4 1 Fig.1 Simplified outline (SOT223) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT VCEO collector-emitter voltage 50 V ICM peak collector current 5 A RCEsat equivalent on-resistance <145 m Ω |
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