PB4350 datasheet(3/12 Pages) PHILIPS

3 / 12 page

2003 May 13

Philips Semiconductors

Product speciﬁcation

50 V low VCEsat NPN transistor

PBSS4350Z

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.

3. For other mounting conditions see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

THERMAL CHARACTERISTICS

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.

3. For other mounting conditions see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

ICM

peak collector current

−

IBM

peak base current

−

Ptot

total power dissipation

Tamb ≤ 25 °C; notes 1 and 3

−

1.35

Tamb ≤ 25 °C; notes 2 and 3

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient in free air; notes 1 and 3

K/W

in free air; notes 2 and 3

62.5

K/W

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