BLF548 datasheet(4/15 Pages) PHILIPS

номер детали	BLF548

подробное описание детали	UHF push-pull power MOS transistor

PDF	15 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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4 / 15 page

2003 Sep 26

Philips Semiconductors

Product speciﬁcation

UHF push-pull power MOS transistor

BLF548

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor section

V(BR)DSS

drain-source breakdown voltage VGS = 0; ID =40mA

−−

IDSS

drain-source leakage current

VGS = 0; VDS =28V

−−

0.5

IGSS

gate-source leakage current

VGS = ±20 V; VDS =0

−−

µA

VGSth

gate-source threshold voltage

ID = 160 mA; VDS =10V

−

gfs

forward transconductance

ID = 4.8 A; VDS = 10 V

2.4

3.5

−

RDSon

drain-source on-state resistance ID = 4.8 A; VGS =10V

−

0.25

0.3

Ω

IDSX

on-state drain current

VGS = 15 V; VDS = 10 V

−

Cis

input capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

105

−

Cos

output capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

Crs

feedback capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

VGS group indicator

GROUP

LIMITS

(V)

GROUP

LIMITS

(V)

MIN.

MAX.

MIN.

MAX.

2.0

2.1

3.3

3.4

2.1

2.2

3.4

3.5

2.2

2.3

3.5

3.6

2.3

2.4

3.6

3.7

2.4

2.5

3.7

3.8

2.5

2.6

3.8

3.9

2.6

2.7

3.9

4.0

2.7

2.8

4.0

4.1

2.8

2.9

4.1

4.2

2.9

3.0

4.2

4.3

3.0

3.1

4.3

4.4

3.1

3.2

4.4

4.5

3.2

3.3

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