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BLF548 датащи(PDF) 5 Page - NXP Semiconductors

номер детали BLF548
подробное описание детали  UHF push-pull power MOS transistor
PDF  15 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLF548 датащи(HTML) 5 Page - NXP Semiconductors

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2003 Sep 26
5
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF548
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
VDS =10V.
handbook, halfpage
0
1
2
3
−1
−2
−3
−4
10−1
10−2
110
TC
(mV/K)
ID (A)
MRA524
Fig.5
Drain current as a function of gate-source
voltage; typical values per section.
VDS = 10 V; Tj =25 °C.
handbook, halfpage
0
5
10
15
20
25
0
4
8
12
16
MRA529
ID
(A)
VGS (V)
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
ID = 4.8 A; VGS = 10 V.
handbook, halfpage
0
0.1
0.2
0.3
0.4
0.5
0
40
80
120
MRA522
RDSon
(Ω)
Tj (
oC)
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
handbook, halfpage
0
100
200
300
400
0
102030
C
(pF)
VDS (V)
Cos
Cis
MRA525



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