2003 Sep 26

3

Philips Semiconductors

Product specification

UHF push-pull power MOS transistor

BLF548

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor section unless otherwise specified

drain-source voltage

−

65

V

gate-source voltage

−±20

V

drain current (DC)

−

15

A

total power dissipation

equally loaded

−

330

W

storage temperature

−65

+150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to

mounting base

both sections equally loaded

0.5

K/W

thermal resistance from mounting

base to heatsink

total device; both sections equally

loaded

0.15

K/W

Fig.2 DC SOAR.

Total device; both sections equally loaded.

handbook, halfpage

1

10

110

MRA997

(1)

ID

(A)

VDS (V)

(2)

Fig.3 Power derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

Total device; both sections equally loaded.

handbook, halfpage

0

50

100

150

200

250

300

350

400

0

20

40

60

80

100

120

(2)

(1)

MRA532

Ptot

(W)

Th (