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MPXM2102AS датащи(PDF) 327 Page - Motorola, Inc |
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MPXM2102AS датащи(HTML) 327 Page - Motorola, Inc |
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327 / 670 page ![]() MPXV5004G SERIES 3–181 Motorola Sensor Device Data www.motorola.com/semiconductors ON–CHIP TEMPERATURE COMPENSATION, CALIBRATION AND SIGNAL CONDITIONING The performance over temperature is achieved by inte- grating the shear–stress strain gauge, temperature com- pensation, calibration and signal conditioning circuitry onto a single monolithic chip. Figure 2 illustrates the gauge configuration in the basic chip carrier (Case 482). A fluorosilicone gel isolates the die surface and wire bonds from the environment, while allowing the pres- sure signal to be transmitted to the silicon diaphragm. The MPXV5004G series sensor operating characteristics are based on use of dry air as pressure media. Media, other than dry air, may have adverse effects on sensor performance and long–term reliability. Internal reliability and qualification test for dry air, and other media, are available from the factory. Contact the factory for information regarding media tolerance in your application. Figure 3 shows the recommended decoupling circuit for in- terfacing the output of the MPXV5004G to the A/D input of the microprocessor or microcontroller. Proper decoupling of the power supply is recommended. Figure 4 shows the sensor output signal relative to pres- sure input. Typical, minimum and maximum output curves are shown for operation over a temperature range of 10 °C to 60 °C using the decoupling circuit shown in Figure 3. The output will saturate outside of the specified pressure range. Figure 2. Cross–Sectional Diagram (Not to Scale) 1.0 mF IPS 470 pF OUTPUT Vs +5 V 0.01 mF GND Vout Figure 3. Recommended power supply decoupling and output filtering. For additional output filtering, please refer to Application Note AN1646. FLUOROSILICONE GEL DIE COAT WIRE BOND DIFFERENTIAL SENSING ELEMENT THERMOPLASTIC CASE STAINLESS STEEL CAP LEAD FRAME P1 P2 DIE BOND DIE Figure 4. Output versus Pressure Differential MAX DIFFERENTIAL PRESSURE 5.0 4.0 3.0 2.0 TRANSFER FUNCTION: Vout = VS*[(0.2*P) + 0.2] ± 1.5% VFSS VS = 5.0 V ± 0.25 Vdc TEMP = 10 to 60 °C 1.0 MIN TYPICAL 2 kPa 200 mm H2O (See Note 5 in Operating Characteristics) 4 kPa 400 mm H2O Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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