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AST20S датащи(PDF) 6 Page - Advanced Semiconductor Business Inc. |
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AST20S датащи(HTML) 6 Page - Advanced Semiconductor Business Inc. |
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6 / 41 page ![]() 6/41 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 February 2017 AST20S High Gain, Low Noise Amplifier 1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT GSM, CDMA S11 < -18 dB 880 ~ 953 MHz +5 V Board Layout (FR4, 23x13 mm2, 0.8T) Note: 1) The length of the strip line P1 is given as below at the PCB with Er = 4.5 and T = 0.8 mm. P1 Length: 1.1 mm, Width: 0.3 mm 2) Gain and S11 are in trade-off and varied with the length of P1 Bottom Top 600 700 800 900 1000 1100 1200 0 5 10 15 20 25 Frequency (MHz) 600 700 800 900 1000 1100 1200 -30 -25 -20 -15 -10 -5 0 Frequency (MHz) 600 700 800 900 1000 1100 1200 -25 -20 -15 -10 -5 0 Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 Frequency (MHz) Parameter Symbol Unit Frequency (MHz) 880 953 Power Gain Gp dB 19.5 19.0 Noise Figure NF dB 0.8 0.8 Input Return Loss RLin dB -20 -18 Output Return Loss RLout dB -14 -14 1 dB Gain Compression Output Power Po(1dB) dBm 15.5 15.5 3rd Intercept Point Output Power1) OIP3 dBm 26 27 Circuit Current Id mA 40 |
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