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AST20S датащи(PDF) 21 Page - Advanced Semiconductor Business Inc. |
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AST20S датащи(HTML) 21 Page - Advanced Semiconductor Business Inc. |
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21 / 41 page ![]() 21/41 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 February 2017 AST20S High Gain, Low Noise Amplifier 1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT GSM, CDMA 850 ~ 950 MHz +5 V, 11 mA Board Layout (FR4, 23x13 mm2, 0.8T) Note: 1) The length of the strip line P1 is given as below at the PCB with Er = 4.5 and T = 0.8 mm. P1 Length: 3.6 mm, Width: 0.3 mm 2) Gain and S11 are in trade-off and varied with the length of P1 Bottom Parameter Symbol Unit Frequency (MHz) 868 915 Power Gain Gp dB 15.5 15.0 Noise Figure NF dB 0.7 0.6 Input Return Loss RLin dB -9 -9 Output Return Loss RLout dB -8 -8 1 dB Gain Compression Output Power Po(1dB) dBm 4 4 3rd Intercept Point Output Power1) OIP3 dBm 17.5 18.5 Circuit Current Id mA 11 Top 600 700 800 900 1000 1100 1200 0 5 10 15 20 25 Frequency (MHz) -40 oc 25 oc 85 oc 600 700 800 900 1000 1100 1200 -25 -20 -15 -10 -5 0 5 S22 S11 Frequency (MHz) -40 oc 25 oc 85 oc -60 -40 -20 0 20 40 60 80 100 0 5 10 15 20 25 Temperature ( o C) Frequency = 900 MHz 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 Frequency (MHz) |
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