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AST20S датащи(PDF) 39 Page - Advanced Semiconductor Business Inc. |
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AST20S датащи(HTML) 39 Page - Advanced Semiconductor Business Inc. |
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39 / 41 page ![]() 39/41 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 February 2017 AST20S High Gain, Low Noise Amplifier 0 500 1000 1500 2000 2500 3000 -25 -20 -15 -10 -5 0 Frequency (MHz) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 Frequency (MHz) Anode http://www.asb.co.kr EB-363-D3 Cathode GND ASB Inc. GND +Vdevice Photodiode +Vdiode Anode http://www.asb.co.kr EB-363-D3 Cathode GND ASB Inc. GND +Vdevice Photodiode +Vdiode 1) OIP3 is measured with two tones at an output power of -17 dBm/tone separated by 1MHz. 2) OIP3 is measured with two tones at an output power of -20 dBm/tone separated by 1MHz. Parameter Symbol Unit Frequency (MHz) 50 200 950 2150 2500 Power Gain Gp dB 15.0 14.5 11.5 16.1 16.1 Output Return Loss RLout dB -8 -8 -8 -15 -5 EIN EIN pA/rtHz 8.3 5.4 8.0 5.1 5.9 3rd Intercept Point Output Power1) OIP3 dBm 151) 131) 92) 82) 52) Circuit Current Id mA 28 Device Voltage Vd V 3.26 Schematic S-parameters APPLICATION CIRCUIT Trans-impedance Amplifier 50 50 ~ 2500 MHz +5 V Board Layout (FR4, 24x16 mm2, 0.8T) |
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