DAC7571IDBVT datasheet(3/21 Pages) TI

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DAC7571

SLAS374A – FEBRUARY 2003 – REVISED JANUARY 2004

ELECTRICAL CHARACTERISTICS (continued)

DD = +2.7 V to +5.5 V; RL = 2 kΩ to GND; CL = 200 pF to GND; all specifications -40°C to +105°C unless otherwise noted.

DAC7571

PARAMETER

CONDITIONS

UNITS

MIN

TYP

MAX

Full-scale error

All ones loaded to DAC register

-0.15

-1.25

% of FSR

Gain error

±1.25

% of FSR

Zero code error drift

±7

µV/

°C

Gain temperature coefficient

±3

ppm of FSR/

°C

OUTPUT CHARACTERISTICS(2)

Output voltage range

VDD

Output voltage settling time

1/4 Scale to 3/4 scale change (400H to C00H)

µ s

Slew rate

V/µs

RL =∞

470

Capacitive load stability

RL = 2kΩ

1000

Code change glitch impulse

1 LSB Change around major carry

nV-s

Digital feedthrough

0.5

nV-s

DC output impedance

Ω

VDD = +5V

Short-circuit current

VDD = +3V

Coming out of power-down mode, VDD = +5V

2.5

µ s

Power-up time

Coming out of power-down mode, VDD = +3V

µ s

LOGIC INPUTS(3)

Input current

± 1

µ A

VINL, Input low voltage

VDD = +3V

0.3

×V

VINH, Input high voltage

VDD = +5V

0.7

×V

Pin capacitance

POWER REQUIREMENTS

VDD

2.7

5.5

IDD (normal operation)

DAC active and excluding load current

VDD = +3.6V to +5.5V

VIH = VDD and VIL = GND

135

200

µ A

VDD = +2.7V to +3.6V

VIH = VDD and VIL = GND

115

160

µ A

IDD (all power-down modes)

VDD = +3.6 V to +5.5

VIH = VDD and VIL = GND

0.2

µ A

VDD = +2.7V to +3.6V

VIH = VDD and VIL = GND

0.05

µ A

POWER EFFICIENCY

IOUT/IDD

ILOAD = 2mA, VDD = +5V

(2)

Specified by design and characterization, not production tested.

(3)

Specified by design and characterization, not production tested.

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