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SMX1J датащи(PDF) 3 Page - STMicroelectronics |
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SMX1J датащи(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() SMX1J Characteristics Doc ID 16180 Rev 3 3/11 Figure 4. Peak pulse power dissipation versus initial junction temperature Figure 5. Peak pulse power versus exponential pulse duration 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 80.0 90.0 100.0 0 25 50 75 100 125 150 175 P (W) PP T (°C) j 10 100 1000 10000 1 10 100 1000 10000 P (W) PP T initial = 25 °C j T (µs) P Figure 6. Clamping voltage versus peak pulse current (exponential waveform, typical values) Figure 7. Junction capacitance versus reverse applied voltage (typical values) 1 10 911 VCL(V) I (A) PP T initial = 25 °C 10/1000 µs j 10 12 100 125 150 175 200 225 250 275 300 325 350 375 400 01 23 45 C(pF) VLINE (V) F = 1 MHz V OSC = 30 mVRMS Tj = 25 °C Figure 8. Forward voltage drop versus peak forward current (typical values) Figure 9. Leakage current versus junction temperature (typical values) 0.01 0.1 1 10 0.5 1.0 1.5 2.0 I FM (A) VFM (V) 0 100 200 300 400 500 25 50 75 100 125 150 Ir (nA) 0 100 200 300 400 500 25 50 75 100 125 150 T(°C) j ° I(nA) |
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