Characteristics

SMX1J

2/11

Doc ID 16180 Rev 3

1

Characteristics

Figure 2.

Electrical characteristics (definitions)

Figure 3.

Pulse waveform

Table 1.

Symbol

Parameter

Value

Unit

85

W

Storage temperature range

-65 to +150

°C

Operating junction temperature range

-55 to +150

°C

Maximum lead temperature for soldering during 10 s.

260

°C

1.

For a surge greater than the maximum values, the diode will fail in short-circuit.

VV

V

I RM

I R

I PP

V

I

I F

V

V

Slope = 1/ Rd

V

V

CL

V

BR

RM

V

F

Symbol

Parameter

V

=

Breakdown voltage

I

=

Leakage current @ V

V

=

Stand-off voltage

V

=

Clamping voltage

R

=

Dynamic impedance

I

=

Peak pulse current

I

=

Breakdown current

T

=

Voltage temperature coefficient

V

=

Forward voltage drop

BR

RM

RM

RM

CL

d

PP

R

F

α

Table 2.

Type

(1)

(2)

10/1000 µs

(3)

10/1000 µs

(2)

8/20 µs

(3)

8/20 µs

25 °C 85 °C

min

max

max

max

µA

V

V

mA

V

A

Ω

VA

Ω

10-4/ °C

SMX1J7.5A

1

2

7.5

8.3

1

14

6.2

0.3

20

40

0.2

6.5

1.

2.

Surge capability given for both directions for unidirectional and bidirectional types

3.

To calculate maximum clamping voltage at other surge level, use the following formula

4.

Repetitive pulse current

tr = rise time (µs)

tp = pulse duration time (µs)

tr

tp

%Ipp

0

50

100