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BAS16VV датащи(PDF) 4 Page - NXP Semiconductors |
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BAS16VV датащи(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page ![]() 9397 750 13856 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 10 September 2004 4 of 12 Philips Semiconductors BAS16VV; BAS16VY Triple high-speed switching diodes 7. Characteristics [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [2] When switched from IF = 10 mA; tr = 20 ns. Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage see Figure 1 IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA - - 1 V IF = 150 mA - - 1.25 V IR reverse current see Figure 3 VR = 25 V - - 30 nA VR = 75 V - - 1 µA VR = 25 V; Tj = 150 °C --30 µA VR = 75 V; Tj = 150 °C --50 µA Cd diode capacitance VR = 0 V; f = 1 MHz; see Figure 4 - - 1.5 pF trr reverse recovery time see Figure 5 [1] --4 ns Vfr forward recovery voltage see Figure 6 [2] - - 1.75 V |
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