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BAS16VV датащи(PDF) 5 Page - NXP Semiconductors

номер детали BAS16VV
подробное описание детали  Triple high-speed switching diodes
PDF  12 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS16VV датащи(HTML) 5 Page - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 10 September 2004
5 of 12
Philips Semiconductors
BAS16VV; BAS16VY
Triple high-speed switching diodes
(1) Tj = 150 °C; typical values.
(2) Tj =25 °C; typical values.
(3) Tj =25 °C; maximum values.
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig 1.
Forward current as a function of forward
voltage.
Fig 2.
Maximum permissible non-repetitive peak
forward current as a function of pulse duration.
f = 1 MHz; Tj = 25 °C.
Fig 3.
Reverse current as a function of junction
temperature.
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values.
02
300
IF
(mA)
0
100
200
mbg382
1
VF (V)
(1)
(2)
(3)
mgw103
tp (µs)
1104
103
10
102
1
10
IFSM
(A)
10−1
105
104
10
200
0
mga884
100
Tj (°C)
IR
(nA)
103
102
75 V
25 V
typ
max
VR = 75 V
typ
08
16
12
4
0.8
0.6
0
0.4
0.2
mbg446
VR (V)
Cd
(pF)



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