BAS16VV datasheet(3/12 Pages) PHILIPS

3 / 12 page

9397 750 13856

Product data sheet

Rev. 02 — 10 September 2004

3 of 12

Philips Semiconductors

BAS16VV; BAS16VY

Triple high-speed switching diodes

[1]

Tj = 25 °C prior to surge; see Figure 2.

[2]

Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[3]

Single diode loaded.

[4]

Solder points at pins 2, 3, 5 and 6.

Thermal characteristics

[1]

Refer to SOT666 standard mounting conditions.

[2]

Reﬂow soldering is the only recommended soldering method.

[3]

Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting

pad.

[4]

Solder points at pins 2, 3, 5 and 6.

IFSM

non-repetitive peak forward

current

square wave

[1] -

tp = 1 µs

4.5

tp = 1 ms

tp = 1 s

0.5

Ptot

total power dissipation

SOT666

Tamb ≤ 25 °C

[2] [3] -

180

SOT363

Tsp = 85 °C

[4] -

250

junction temperature

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 6:

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 7:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from junction

to ambient

in free air

SOT666

[1] [2] -

700

K/W

[2] [3] -

410

K/W

Rth(j-s)

thermal resistance from junction

to soldering point

SOT363

[4] -

260

K/W

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