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TMS29LF040 датащи(PDF) 17 Page - Texas Instruments |
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TMS29LF040 датащи(HTML) 17 Page - Texas Instruments |
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17 / 38 page ![]() TMS29LF040, TMS29VF040 524288 BY 8-BIT FLASH MEMORIES SMJS825D – SEPTEMBER 1995 – REVISED JUNE 1998 17 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 timing requirements controlled by E (see Figure 5) ALTERNATE SYMBOL ’29LF040-80 ’29LF040-90 ’29LF040-10 ’29VF040-10 UNIT SYMBOL MIN TYP MAX MIN TYP MAX MIN TYP MAX tAVAV Cycle time, write tc(W) 80 90 100 ns tEHEH1 Cycle time, programming operation 20 20 20 µs tEHEH2 Cycle time, sector-erase operation (see Note 9) 2 30 2 30 2 30 s tEHEH3 Cycle time, chip-erase operation (see Note 10) 14 120 14 120 14 120 s tELAX Hold time, address th(A) 45 45 45 ns tEHDX Hold time, data th(D) 0 0 0 ns tEHWH Hold time, W th(W) 0 0 0 ns tELEH Pulse duration, E low tw(EL) 35 45 45 ns tEHEL Pulse duration, E high tw(EH) 20 20 20 ns tGHEL Recovery time, read before write trec(R) 0 0 0 ns tAVEL Setup time, address tsu(A) 0 0 0 ns tDVEH Setup time, data tsu(D) 35 45 45 ns tWLEL Setup time, W tsu(W) 0 0 0 ns ALTERNATE SYMBOL ’29LF040-12 ’29VF040-12 ’29LF040-15 ’29VF040-15 UNIT SYMBOL MIN TYP MAX MIN TYP MAX tAVAV Cycle time, write tc(W) 120 150 ns tEHEH1 Cycle time, programming operation 20 20 µs tEHEH2 Cycle time, sector-erase operation (see Note 9) 2 30 2 30 s tEHEH3 Cycle time, chip-erase operation (see Note 10) 14 120 14 120 s tELAX Hold time, address th(A) 50 50 ns tEHDX Hold time, data th(D) 0 0 ns tEHWH Hold time, W th(W) 0 0 ns tELEH Pulse duration, E low tw(EL) 50 50 ns tEHEL Pulse duration, E high tw(EH) 20 20 ns tGHEL Recovery time, read before write trec(R) 0 0 ns tAVEL Setup time, address tsu(A) 0 0 ns tDVEH Setup time, data tsu(D) 50 50 ns tWLEL Setup time, W tsu(W) 0 0 ns NOTES: 9. Timing diagram of E-controlled sector-erase operation not enclosed. 10. Timing diagram of E-controlled chip-erase operation not enclosed. |
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