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TMS29LF040 датащи(PDF) 16 Page - Texas Instruments

номер детали TMS29LF040
подробное описание детали  524288 BY 8-BIT FLASH MEMORIES
PDF  38 Pages
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TMS29LF040 датащи(HTML) 16 Page - Texas Instruments

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TMS29LF040, TMS29VF040
524288 BY 8-BIT
FLASH MEMORIES
SMJS825D – SEPTEMBER 1995 – REVISED JUNE 1998
16
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
timing requirements controlled by W (see Figure 4, Figure 7, Figure 9, Figure 11, Figure 13,
Figure 15, and Figure 17) (continued)
ALTERNATE
SYMBOL
’29LF040-12
’29VF040-12
’29LF040-15
’29VF040-15
UNIT
SYMBOL
MIN
TYP
MAX
MIN
TYP
MAX
tAVAV
Cycle time, write
tc(W)
120
150
ns
tWHWH1
Cycle time, programming operation
tc(W)PR
20
20
µs
tWHWH2
Cycle time, sector-erase operation
2
30
2
30
s
tWHWH3
Cycle time, chip-erase operation
14
120
14
120
s
tWLAX
Hold time, address
th(A)
50
50
ns
tWHDX
Hold time, data valid after W high
th(D)
0
0
ns
tWHEH
Hold time, E
th(E)
0
0
ns
tWHWL
Pulse duration, W high
tw(WH)
20
20
ns
tWLWH1
Pulse duration, W low
tw(WL)
50
50
ns
tWLWH2
Pulse duration, W low (see Note 7)
100
100
µs
tWLWH3
Pulse duration, W low (see Note 8)
10
10
ms
tGHWL
Recovery time, read before write
trec(R)
0
0
ns
tAVWL
Setup time, address
tsu(A)
0
0
ns
tDVWH
Setup time, data
tsu(D)
50
50
ns
tAVGH
Setup time, A0 and A6 low and A1 high to G high
(see Note 7)
0
0
ns
tAVGEH
Setup time, A0 low and A1 high to G and E high
(see Note 8)
0
0
ns
tELWL
Setup time, E
tsu(E)
0
0
ns
tGHWH
Setup time, G
0
0
ns
tVCEL
Setup time, VCC
50
50
µs
tEHVWL
Setup time, E VID to W (see Note 8)
4
4
µs
tGHVWL
Setup time, G VID to W (see Notes 7 and 8)
4
4
µs
tHVT
Transition time, VID (see Notes 7 and 8)
4
4
µs
NOTES:
7. Sector-protect timing (see Figure 15)
8. Sector-unprotect timing (see Figure 17)



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