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MDWC0340EB датащи(PDF) 4 Page - MagnaChip Semiconductor.

номер детали MDWC0340EB
подробное описание детали  Common-Drain Dual N-Channel Trench MOSFET 12V, 13.6A, 2.5 m(ohm)
PDF  6 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDWC0340EB датащи(HTML) 4 Page - MagnaChip Semiconductor.

  MDWC0340EB Datasheet HTML 1Page - MagnaChip Semiconductor. MDWC0340EB Datasheet HTML 2Page - MagnaChip Semiconductor. MDWC0340EB Datasheet HTML 3Page - MagnaChip Semiconductor. MDWC0340EB Datasheet HTML 4Page - MagnaChip Semiconductor. MDWC0340EB Datasheet HTML 5Page - MagnaChip Semiconductor. MDWC0340EB Datasheet HTML 6Page - MagnaChip Semiconductor.  
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Dec. 2016. Rev 1.0
MagnaChip Semiconductor Ltd.
4
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Transient Thermal Response
Curve
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-3
10
-2
10
-1
10
0
* Notes :
Duty Factor, D=t
1/t2
PEAK T
J = PDM * ZthJA * RthJA(t) + TA
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1, Rectangular Pulse Duration [sec]
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10
3
100 ms
10 ms
1 s
1 ms
100 s
DC
Operation in This Area
is Limited by R
SS(on) (VGS=3.8V)
Single Pulse
T
J=Max Rated
T
A=25
oC
V
SSSource-Source Voltage [V]
0
5
10
15
0
1000
2000
3000
4000
5000
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
* Notes ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
Fig.7 Gate Charge Characteristics
0
20
40
60
80
100
0
1
2
3
4
5
* Note : I
S
= 2.5A
V
DD = 10V
Q
G, Total Gate Charge [nC]



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