MDWC0340EB datasheet(1/6 Pages) MGCHIP

номер детали	MDWC0340EB

подробное описание детали	Common-Drain Dual N-Channel Trench MOSFET 12V, 13.6A, 2.5 m(ohm)

PDF	6 Pages

Scroll/Zoom	100%

производитель	MGCHIP [MagnaChip Semiconductor.]

домашняя страница	http://www.magnachip.co.kr

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1 / 6 page

Dec. 2016. Rev 1.0

MagnaChip Semiconductor Ltd.

1

Absolute Maximum Ratings (Ta = 25

oC unless otherwise noted)

Characteristics

Symbol

Rating

Units

Source-Source Voltage

VSSS

12

V

Gate-Source Voltage

VGSS

±8

V

Source Current

DC

*1

IS

13.6

A

Pulse

*2

ISp

110

A

Total Power Dissipation

DC

*1

PD

0.89

W

Channel Temperature

Tch

150

oC

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance

RθJA

140

oC/W

MDWC0340EB

Common-Drain Dual N-Channel Trench MOSFET 12V, 13.6A, 2.5 mΩ

General Description

The MDWC0340EB

uses advanced MagnaChip’s

MOSFET Technology, which provides high performance in

on-state resistance and excellent reliability. Excellent low

RSS(ON), low gate charge operation and operation for

Battery Application.

Features

- VSS = 12V

- Source-Source ON Resistance;

RSS(ON) typ. 2.5mΩ @ VGS = 4.5V

RSS(ON) typ. 2.7mΩ @ VGS = 3.8V

RSS(ON) typ. 3.2mΩ @ VGS = 3.1V

RSS(ON) typ. 4.1mΩ @ VGS = 2.5V

Applications

- Portable Battery Protection

Top View

3.54mm*1.77mm WLCSP

1. Source (FET1)

2. Gate (FET1)

3. Source (FET1)

4. Source (FET2)

5. Gate (FET2)

6. Source (FET2)

Аналогичный номер детали - MDWC0340EB

производитель	номер детали	датащи	подробное описание детали
MagnaChip Semiconductor...	MDWC0342E	1Mb / 6P	Common-Drain Dual N-Channel Trench MOSFET 12V Jan. 2021. Rev 1.2
MagnaChip Semiconductor...	MDWC0342ERH	1Mb / 6P	Common-Drain Dual N-Channel Trench MOSFET 12V Jan. 2021. Rev 1.2

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Аналогичное описание - MDWC0340EB

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Аналогичный номер детали - MDWC0340EB

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