MDWC0340EB datasheet(2/6 Pages) MGCHIP

номер детали	MDWC0340EB

подробное описание детали	Common-Drain Dual N-Channel Trench MOSFET 12V, 13.6A, 2.5 m(ohm)

PDF	6 Pages

Scroll/Zoom	100%

производитель	MGCHIP [MagnaChip Semiconductor.]

домашняя страница	http://www.magnachip.co.kr

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2 / 6 page

Dec. 2016. Rev 1.0

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDWC0340EBRH

-55~150

WLCSP

Tape and Reel

Halogen Free

Electrical Characteristics (Ta =25

oC unless otherwise noted)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Units

Static Characteristics

Source-Source Breakdown Voltage

BVSSS

IS = 500μA, VGS = 0V

Gate Threshold Voltage

VGS(th)

VSS = VGS, IS = 1mA

0.5

1.0

1.5

Cut-Off Current

ISSS

VSS = 12V, VGS = 0V

1.0

μA

Gate Leakage Current

IGSS

VGS = ±8V, VSS = 0V

μA

Source-Source Resistance

RSS(ON)

VGS = 4.5V, IS = 5.0A

1.9

2.5

3.3

mΩ

VGS = 3.8V, IS = 5.0A

2.0

2.7

3.6

VGS = 3.1V, IS = 5.0A

2.1

3.2

4.8

VGS = 2.5V, IS = 5.0A

2.4

4.1

7.0

Dynamic Characteristics

Total Gate Charge

= 10V, I

= 2.5A, V

= 4.5V

95.5

Gate-Source Charge

Qgs

7.0

Gate-Drain Charge

Qgd

Input Capacitance

Ciss

= 10V, V

= 0V, f = 1MHz

3340

Reverse Transfer Capacitance

Crss

866

Output Capacitance

Coss

1250

Turn-On Delay Time

td(on)

VGS = 4.5V, VDS = 10V,

ID = 5A, RGEN = 3Ω

156

Rise Time

570

Turn-Off Delay Time

td(off)

4750

Fall Time

9000

Body Diode Characteristics

Source-Source Diode Forward Voltage

VF(S-S)

= 1.0A, V

= 0V

0.7

1.2

Note *1. Mounted on FR4 board

“jesd51-7” (76.2mm x 114.3mm x t1.6mm),

*2. t= 10us, Duty Cycle ≤ 1%

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